Visual Photonics Epitaxy Co Ltd - Asset Resilience Ratio
Visual Photonics Epitaxy Co Ltd (2455) has an Asset Resilience Ratio of 0.06% as of March 2017. The Asset Resilience Ratio measures the percentage of a company's total assets that are held in liquid form (cash and short-term investments). This metric indicates how well-positioned the company is to handle unexpected financial challenges, economic downturns, or strategic opportunities without requiring external financing. Check 2455 strategic assets to equity ratio to assess the company's strategic physical and investment asset allocation.
Liquid Assets
Total Assets
Resilience Assessment
Asset Resilience Ratio Trend (2002–2016)
This chart shows how Visual Photonics Epitaxy Co Ltd's Asset Resilience Ratio has changed over time. See how leveraged is Visual Photonics Epitaxy Co Ltd's balance sheet to measure how much of total assets are equity-financed.
Liquid Assets Composition Over Time
This chart breaks down Visual Photonics Epitaxy Co Ltd's liquid assets into cash & equivalents and short-term investments, showing how the composition has evolved over time. For market capitalisation and broader financial context, see Visual Photonics Epitaxy Co Ltd (2455) market capitalisation.
Current Liquid Assets Breakdown
| Component | Amount | % of Total Assets |
|---|---|---|
| Cash & Equivalents | NT$0.00 | 0% |
| Short-term Investments | NT$1.91 Million | 0.06% |
| Total Liquid Assets | NT$1.91 Million | 0.06% |
Asset Resilience Insights
- Limited Liquidity: Visual Photonics Epitaxy Co Ltd maintains only 0.06% of assets in liquid form.
- This low level may indicate efficient asset utilization but could pose risks during economic downturns.
- The company has significant short-term investments, indicating active treasury management.
Visual Photonics Epitaxy Co Ltd Industry Peers by Asset Resilience Ratio
Compare Visual Photonics Epitaxy Co Ltd's asset resilience ratio with other companies in the same industry.
| Company | Industry | Asset Resilience Ratio |
|---|---|---|
|
Suzhou Maxwell Technologies Co Ltd Class A
SHE:300751 |
Semiconductor Equipment & Materials | 7.74% |
|
JHT Design Co. Ltd. Cl A
SHG:603061 |
Semiconductor Equipment & Materials | 9.01% |
|
Shanghai Originaldow Advanced
SHG:603991 |
Semiconductor Equipment & Materials | 4.04% |
|
Keystone Microtech Corp
TWO:6683 |
Semiconductor Equipment & Materials | 0.29% |
|
Adaptive Plasma Technology Corp
KQ:089970 |
Semiconductor Equipment & Materials | 1.49% |
|
Hubei Tech Semiconductors Co
SHE:300046 |
Semiconductor Equipment & Materials | 42.30% |
|
SAMYANG NC Chem
KQ:482630 |
Semiconductor Equipment & Materials | 0.51% |
|
New Power Plasma Co.Ltd
KQ:144960 |
Semiconductor Equipment & Materials | 0.99% |
Annual Asset Resilience Ratio for Visual Photonics Epitaxy Co Ltd (2002–2016)
The table below shows the annual Asset Resilience Ratio data for Visual Photonics Epitaxy Co Ltd.
| Year | Asset Resilience Ratio (%) | Liquid Assets | Total Assets | Change |
|---|---|---|---|---|
| 2016-12-31 | 0.23% | NT$7.46 Million ≈ $235.09K |
NT$3.24 Billion ≈ $102.12 Million |
-2.64pp |
| 2008-12-31 | 2.87% | NT$64.51 Million ≈ $2.03 Million |
NT$2.25 Billion ≈ $70.78 Million |
-0.49pp |
| 2007-12-31 | 3.36% | NT$71.57 Million ≈ $2.25 Million |
NT$2.13 Billion ≈ $67.07 Million |
-7.61pp |
| 2006-12-31 | 10.97% | NT$182.31 Million ≈ $5.74 Million |
NT$1.66 Billion ≈ $52.34 Million |
+9.99pp |
| 2005-12-31 | 0.98% | NT$11.07 Million ≈ $348.80K |
NT$1.13 Billion ≈ $35.48 Million |
+0.61pp |
| 2004-12-31 | 0.37% | NT$5.02 Million ≈ $158.09K |
NT$1.35 Billion ≈ $42.60 Million |
-3.03pp |
| 2003-12-31 | 3.40% | NT$51.56 Million ≈ $1.62 Million |
NT$1.52 Billion ≈ $47.79 Million |
-2.12pp |
| 2002-12-31 | 5.52% | NT$103.06 Million ≈ $3.25 Million |
NT$1.87 Billion ≈ $58.79 Million |
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About Visual Photonics Epitaxy Co Ltd
Visual Photonics Epitaxy Co., Ltd. engages in the research and development, manufacture, and sale of microelectronic products in Taiwan, the United States, and internationally. The company offers microelectronics epi wafers, including gallium arsenide (GaAs) heterojunction bipolar transistor (HBT), low turn-on voltage HBT, high voltage HBT, InP HBT and HEMT, GaAs pseudomorphic high electron mobil… Read more